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International Scientific Committee

  •                                                                                                             
  •                                   Yan-Gang Zhao, Kanagawa University (Chair)            Jianbing Chen, Tongji University (Co-Chair)
  •  
  • • Siu-Kui Au, Nanyang Technological University
  • • Andre Beck, University of Sao Paulo
  • • Hanbing Bian, University of Lille
  • • Fabio Biondini, Politecnico di Milano
  • • Henry Burton, University of California Los Angeles
  • • Suk Joo Bae, Hanyang University
  • • Jianye Ching, Taiwan University
  • • Chien-Kuo Chiu, Taiwan University of Science and Technology
  • • Lincong Chen, Huaqiao University
  • • Zhao-Hui Chen, Chongqing University
  • • Val Dimitri, Heriot-Watt University
  • • Michael Faber, Aalborg University
  • • Scott Ferson, University of Liverpool
  • • Paolo Gardoni, University of Illinois at Urbana-Champaign
  • • Roger Ghanem, University of Southern California
  • • Jin-Xin Gong, Dalian University of Technology
  • • Wei Gao, The University of New South Wales
  • • Bin Huang, Wuhan University of Technology
  • • Guoqing Huang, Chongqing University
  • • Hong-Wei Huang, Tongji University
  • • Jun He, Shanghai Jiao Tong University
  • • Han-Ping Hong, Harbin Institute of Technology,Shenzhen
  • • Hong-Zhong Huang, University of Electronic Science and Technology of China
  • • Wei-Liang Jin, Zhejiang University
  • • Hector Jensen, Santa Maria University
  • • Youbao Jiang, Changsha University of Science and Technology
  • • Masaru Kitahara, University of Tokyo
  • • Takeshi Kitahara, Kanto Gakuin University 
  • • Myrto Konstandinidou, NCSR Demokritos
  • • Ioannis Kougioumtzoglou, Columbia University
  • • Heung Fai Lam, City University of Hong Kong
  • • Chun-Qing Li, RMIT University
  • • Dian-Qing Li, Wuhan University
  • • Yue Li, Case Western Reserve University
  • • Kuo-Wei Liao, Taiwan University of Science and Technology
  • • Ying-Min Low, National University of Singapore
  • • Da-Gang Lu, Harbin Institute of Technology
  • • David De Leon, Autonomous Mexico State University
  • • Quan-Wang Li, Tsinghua University
  • • Zhangjun Liu, Wuhan Institute of Technology
  • • Abbie Liel, University of Colorado Boulder
  • • John van de Lindt, Colorado State University
  • • Mitsuyoshi Akiyama, Waseda University
  • • C.S. Manohar, Indian Institute of Science
  • • Sankaran Mahadevan, Vanderbilt University
  • • Mohammad Pourgol-Mohammad, University of Maryland
  • • Di-Tao Niu, Xi’an University of Architecture and Technology
  • • Edoardo Patelli, University of Strathclyde
  • • Mahesh Pandey, University of Waterloo
  • • Dirk Proske, Bern University of Applied Sciences
  • • Antonina Pirrotta, University of Palermo
  • • Matteo Pozzi, Carnegie Mellon University
  • • Yongbo Peng, Tongji University
  • • Xudong Qian, National University of Singapore
  • • Mauricio Sánchez-Silva, University of Los Andes
  • • Junho Song, Seoul National University
  • • Seymour M.J. Spence, University of Michigan
  • • Daniel Straub, Technical University Munich
  • • Bruno Sudret, ETH Zurich
  • • Mark Stewart, University of Technology Sydney
  • • Giovanni Sansavini, Eidgenössische Technische Hochschule Zürich
  • • Isam Shahrour, University of Lille
  • • Ping Tan, Guangzhou University
  • • Mahmoud Reda Taha, University of New Mexico
  • • Marcos Valdebenito, TU Dortmund University
  • • Dahai Wang, Wuhan University of Technology
  • • Hao Wang, Southeast University
  • • Jingfeng Wang, Hefei University of Technology
  • • Naiyu Wang, Zhejiang University
  • • Yu Wang, City University of Hong Kong
  • • Xian-Xun (Arnold) Yuan, Toronto Metropolitan University
  • • Dixiong Yang, Dalian University of Technology
  • • Ting-Hua Yi, Dalian University of Technology
  • • Ikumasa Yoshida, Tokyo City University
  • • Hao Zhang, University of Sydney
  • • Li-Min Zhang, Hong Kong University of Science and Technology
  • • Lulu Zhang, Shanghai Jiao Tong University
  • • Jie Zhang, Tongji University
  • • Lunhai Zhi, Hefei University of Technolog
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